Alloying strategy for two-dimensional GaN optical emitters

The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using first-principles calculations we explored alloying of 2D-GaN to achieve an optically active material with a tunable band gap. The effect of isoelectronic III-V substitutional elements on the band gaps, band offsets, and …