Influence of annealing on the interface structure and strain relief in Si/Ge heterostructures on (100) Si

Research work on the general problem of the nature and thermal stability of the Si/Ge semiconductor interface is reviewed. We report on our recent studies of the interface structure in [(Si)(m)(Ge)(n)](p) superlattices and (Ge)(n) layers buried in Si as revealed by Raman scattering, extended X-ray absorption fine structure, and X-ray techniques. Strain relaxation and interdiffusion in the superlattices caused by annealing have been …