Radiation effects in MOS devices caused by x-ray and e -beam lithography

In this study we have found that electron–beam and x-ray irradiations of metal (or polysilicon) -oxide-semiconductor devices performed at typical PBS or PMMA exposure levels create temperature-bias-stress (TBS) instability. Experimental results can be most reasonably explained by assuming that exposure to both of these types of ionizing radiation causes mobilization of positive charge in the insulator. The positive charge is forced closer to …