Journal article
Implantation and grain growth in ni thin films induced by Bi and Ag ions
Abstract
Thin (25–60 nm) Ni films deposited on NaCl at 300 K. and 673 K have been implanted with 40–200 keV ions of Bi and Ag. Rutherford backscattering analysis has been used to measure the film thickness and retained Ag and Bi atom concentrations whilst electron microscopy has been used to determine the microstructure and crystallographic relationships. A Bi concentration of 7.4 at.% was reached in the Ni films without observable precipitation of a …
Authors
Wang P; Thompson DA; Smeltzer WW
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 16, No. 2-3, pp. 288–292
Publisher
Elsevier
Publication Date
June 1986
DOI
10.1016/0168-583x(86)90025-x
ISSN
0168-583X