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Etching of InP surface oxide with atomic hydrogen...
Journal article

Etching of InP surface oxide with atomic hydrogen produced by electron cyclotron resonance

Abstract

The plasma output of an electron cyclotron resonance source operating with hydrogen has been characterized using optical emission spectroscopy to observe neutral excited atomic hydrogen H* and a Langmuir probe to observe H+ as a function of currents to the two electromagnets producing the magnetic field. The rate at which the hydrogen plasma etches the surface oxide on InP substrates has been measured as a function of substrate temperature over …

Authors

Hofstra PG; Robinson BJ; Thompson DA; McMaster SA

Journal

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 13, No. 4, pp. 2146–2150

Publisher

American Vacuum Society

Publication Date

July 1, 1995

DOI

10.1116/1.579534

ISSN

0734-2101

Labels

Fields of Research (FoR)