Evaluation of plasma and thermal sources for atomic hydrogen-assisted epitaxy of InP

Homoepitaxial layers of InP have been grown on (100) InP substrates by gas source molecular beam epitaxy while simultaneously exposed to an atomic hydrogen flux produced either by plasma or by thermal cracking. The thermal H-assisted growths were performed with various H fluxes, H2 cracker cell temperatures, PH3 cracker cell temperatures, annealing conditions, and Be doping levels. Photoluminescence and Hall effect studies indicate improved …