A study has been made of silicon carbide implanted with nitrogen at an elevated temperature (450 °C) using channeling techniques and electrical (C–V) measurements. Results indicate the formation of a PIN structure after high temperature anneals. The buried insulating region is related to a buried damaged layer, both of which decrease in thickness with increasing anneal temperature. In a thin (~ 100 Å) surface layer, 20–30% of the implanted nitrogen atoms became electrically active. This is shown to be in reasonable agreement with a measured average 'substitutional' percentage of 50% throughout the implanted layer.