Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

Lateral composition modulation (LCM) in In1−xGaxAsyP1−y layers deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented (A and B, h = 1,2 and 3) InP substrates are characterized by photoluminescence and X-ray diffraction. Differences in the Group V incorporation for these various surfaces are modelled by incorporation coefficients and discussed in terms of the different surface bonding configurations. These results suggest …