Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

Lateral composition modulation (LCM) in In1−xGaxAsyP1−y layers deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented (A and B, h = 1,2 and 3) InP substrates are characterized by photoluminescence and X-ray diffraction. Differences in the Group V incorporation for these various surfaces are modelled by incorporation coefficients and discussed in terms of the different surface bonding configurations. These results suggest that the LCM is inhibited by enhanced Group V incorporation on double dangling Group III bonds ((100) and B surfaces) compared to single dangling Group III bonds (A surfaces). The results also suggest that the LCM is inhibited by reduction of Group III adatom migration due to the more reactive step-edge sites of B surfaces compared to A surfaces.