Journal article
InP/InGaAsP double-heterostructure optoelectronic switch
Abstract
The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and operational parameters exhibit a lower switching voltage ( approximately=1.8 V) and a higher on-state holding current ( approximately=20 mA) than found in either the Si/SiGe- or GaAs/AlGaAs-based DOES of comparable structures and doping levels. In the on-state, optical emission is observed …
Authors
Kovacic SJ; Robinson BJ; Simmons JG; Thompson DA
Journal
IEEE Electron Device Letters, Vol. 14, No. 2, pp. 54–56
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
February 1, 1993
DOI
10.1109/55.215106
ISSN
0741-3106