Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures

An analytical electron microscope was used for direct measurement of the concentration profiles of $\hbox{In}_{1 - x} \hbox{Ga}_x \hbox{As}_y \hbox{P}_{1 - y}$ quantum wells (QWs) and barriers grown by molecular beam epitaxy on GaAs substrates. The well and barrier layers had compositional differences on the group III (In/Ga) sublattice only, the group V (As/P) sublattice only, and on both sublattices. These were annealed over a range of …