Journal article
DIFFERENCES BETWEEN RADIATION-DAMAGE TO GAAS BY IMPLANTATION OF P AND AL IONS
Authors
DAVIES JA; TASHLYKOV IS; THOMPSON DA
Journal
SOVIET PHYSICS SEMICONDUCTORS-USSR, Vol. 16, No. 4, pp. 373–376
Publisher
AMER INST PHYSICS
Publication Date
January 1, 1982
ISSN
0038-5700