Journal article
Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices for optoelectronics
Abstract
Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high …
Authors
Ramírez JM; Wojcik J; Berencén Y; Ruiz-Caridad A; Estradé S; Peiró F; Mascher P; Garrido B
Journal
Nanotechnology, Vol. 26, No. 8,
Publisher
IOP Publishing
Publication Date
February 27, 2015
DOI
10.1088/0957-4484/26/8/085203
ISSN
0957-4484