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Order-Disorder Transitions in the Melt Morphology...
Journal article

Order-Disorder Transitions in the Melt Morphology of Laser-Irradiated Silicon

Abstract

The melting of thin silicon films with continuous laser radiation is characterized by the formation of several distinct and reproducible microscopic patterns of solid and molten regions with various degrees of long-range order. The pattern formation reflects the competition between the coherent energy deposition from the laser beam and the incoherent heat loss via diffusion. A phase, or stability, diagram of the structures has been constructed …

Authors

Preston JS; van Driel HM; Sipe JE

Journal

Physical Review Letters, Vol. 58, No. 1, pp. 69–72

Publisher

American Physical Society (APS)

Publication Date

January 5, 1987

DOI

10.1103/physrevlett.58.69

ISSN

0031-9007