Journal article
A Si BiCMOS Transimpedance Amplifier for 10-Gb/s SONET Receiver
Abstract
A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in $0.25-\mu \text{m}$ modular Si BiCMOS technology. The transimpedance of 55 $\text{dB}\Omega$ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of −17 dBm was measured at 10 Gb/s for a bit-error rate …
Authors
Kim HH; Chandrasekhar S; Burrus CA; Bauman J
Journal
IEEE Journal of Solid-State Circuits, Vol. 36, No. 5, pp. 769–776
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
5 2001
DOI
10.1109/4.918914
ISSN
0018-9200