Long indium-rich InGaAs nanowires by SAG-HVPE Journal Articles uri icon

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abstract

  • Abstract We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μm h−1 and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.

authors

  • Chereau, Emmanuel
  • Grégoire, Gabin
  • Avit, Geoffrey
  • Taliercio, Thierry
  • Staudinger, Philipp
  • Schmid, Heinz
  • Bougerol, Catherine
  • Trassoudaine, Agnès
  • Gil, Evelyne
  • Lapierre, Ray Robert
  • André, Yamina

publication date

  • May 6, 2024