Phosphorus-Controlled Nanoepitaxy of Asymmetric GaAs–InP Core–Shell Bent Nanowires: Implications for Bottom-Up Nanowire Transistors and Sensors

Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing the bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymmetric deposition of lattice-mismatched …