Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices

GaAs-based nanowires are among the most promising candidates for realizing a monolithic integration of III–V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to understand their interaction with light governing the absorption and extraction efficiency as well as the carrier recombination dynamics determining the radiative efficiency. Here, we study the …