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SIMS depth profiling of implanted helium in pure...
Journal article

SIMS depth profiling of implanted helium in pure iron using CsHe+ detection mode

Abstract

Helium distribution in implanted monocrystalline and polycrystalline Fe samples has been measured by secondary ion mass spectrometry (SIMS). The use of Cs+ primary ions in conjunction with the detection of CsHe+ molecular ions was shown to be an efficient method to overcome the very high first ionization potential of helium. The implantation ranges of 60keV He ions in samples are measured about 220nm in agreement with projected ranges …

Authors

Lefaix-Jeuland H; Moll S; Legendre F; Jomard F

Journal

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 295, , pp. 69–71

Publisher

Elsevier

Publication Date

January 2013

DOI

10.1016/j.nimb.2012.11.003

ISSN

0168-583X