Temperature-dependent optical anisotropy of the vicinal Si(001):(2×1) surface

Reflectance anisotropy spectroscopy (RAS) has become a powerful surface characterization tool in semiconductor physics. To clarify the origins of RAS spectra model systems are currently being studied. Here we study the temperature dependence of the RAS spectrum of the Si(001) surface. The intensity of the positive RAS peak at 4.3 eV is found to provide a direct measure of the (2×1):(1×2) domain ratio, while the broad negative trough centered on about 3 eV shows variation of line shape as well as intensity with temperature. The origins of these features are discussed. © 1996 The American Physical Society.