ChemInform Abstract: Synthesis, Crystal and Electronic Structures of New Narrow‐Band‐Gap Semiconducting Antimonide Oxides Ln3SbO3 and Ln8Sb3‐δO8 with Ln: La, Sm, Gd, and Ho. Journal Articles uri icon

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abstract

  • AbstractThe title compounds are prepared from mixtures of LnSb (Ln: La, Sm, Gd, Ho) and Ln2O3 in a 1:1 molar ratio for Ln3SbO3, and LnSb, Ln2O3, and Sb in a 8:8:1 ratio for Ln8Sb3O8 (Ta tubes, 1300—1600 °C, 2—6 h).

publication date

  • October 12, 2010