ChemInform Abstract: Synthesis, Crystal and Electronic Structures of New Narrow‐Band‐Gap Semiconducting Antimonide Oxides Ln3SbO3 and Ln8Sb3‐δO8 with Ln: La, Sm, Gd, and Ho.

Abstract The title compounds are prepared from mixtures of LnSb (Ln: La, Sm, Gd, Ho) and Ln 2 O 3 in a 1:1 molar ratio for Ln 3 SbO 3 , and LnSb, Ln 2 O 3 , and Sb in a 8:8:1 ratio for Ln 8 Sb 3 O 8 (Ta tubes, 1300—1600 °C, 2—6 h).