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Packaging-induced stress distribution in high...
Journal article

Packaging-induced stress distribution in high power AlGaAs laser diodes by photoluminescence mapping

Abstract

The microphotoluminescence (μ-PL) technique is proposed for mapping local stress distribution in GaAs/AlGaAs high power laser diode arrays (LDAs). This technique will be used to monitor the stresses that can be induced on the bars during the packaging process. We show herein that also a detailed study of the stress profiles that could exist in the bars before mounting and after aging can be achieved with this technique.

Authors

Martin P; Landesman J-P; Bisaro R; Martin E; Fily A; Hirtz JP

Journal

Materials Science and Engineering B, Vol. 80, No. 1-3, pp. 188–192

Publisher

Elsevier

Publication Date

March 1, 2001

DOI

10.1016/s0921-5107(00)00627-9

ISSN

0921-5107

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