Journal article
Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge
Abstract
A gas phase kinetic model combined to a 3D atomic etching model have been developed to study the etching process of InP under Cl2-Ar ICP plasma discharge. A gas phase global kinetic model is used to calculate the reactive particle fluxes implied in the etching mechanisms. The 3D atomic InP etching model is based on the Monte Carlo kinetic approach where the plasma surface interactions are described in the probability way. The coupling between …
Authors
Rhallabi A; Chanson R; Landesman J-P; Cardinaud C; Fernandez M-C
Journal
The European Physical Journal Applied Physics, Vol. 53, No. 3,
Publisher
EDP Sciences
Publication Date
March 2011
DOI
10.1051/epjap/2010100056
ISSN
1286-0042