Preprint
Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2
Abstract
To ensure the practical application of atomically thin transition metal
dichalcogenides, it is essential to characterize their structural stability
Authors
Zheng H; Valtierra S; Ofori-Opoku N; Chen C; Sun L; Jiao L; Bevan KH; Tao C
Publication date
June 15, 2017
DOI
10.48550/arxiv.1706.05096
Preprint server
arXiv