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Optimization of ohmic contacts to n-type GaAs...
Preprint

Optimization of ohmic contacts to n-type GaAs nanowires

Abstract

III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions

Authors

Hüttenhofer L; Xydias D; Lewis RB; Rauwerdink S; Tahraoui A; Küpers H; Geelhaar L; Marquardt O; Ludwig S

Publication date

November 22, 2017

DOI

10.48550/arxiv.1711.08284

Preprint server

arXiv