Preprint
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Abstract
We present a novel two-step approach for the selective area growth (SAG) of
GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed
Authors
Küpers H; Lewis RB; Tahraoui A; Matalla M; Krüger O; Bastiman F; Riechert H; Geelhaar L
Publication date
August 18, 2017
DOI
10.48550/arxiv.1708.05596
Preprint server
arXiv