Laser machining of free-standing silicon nitride membranes

Patterning free-standing Silicon Nitride membranes has enabled the development of various SiN-based devices such as quantum resonators, biosensors, temperature detectors, and plasmonic devices. Patterning SiN membranes usually involves expensive and time-consuming cleanroom techniques that limit flexibility in the development of new SiN membrane designs. While ultrafast laser machining has been proposed to create micron to submicron features in these membranes, laser machining of large area features has not been reported as it often results in membrane failure due to stress concentration during laser machining. We show that continuous laser machining can be used to create a crack and to extract the fracture toughness of the membrane (1.9 ± 0.3 MPa.m1/2). To successfully patterned SiN membranes without failure, a low stress laser machining method is developed, where stress concentration can be minimized by adjusting the laser drilling sequence, a result confirmed by finite element simulations. Complex shapes can thus be machined over a large area with a very high success rate. Laser parameters are optimized to improve the quality of the laser-cut edges without the formation of laser-induced periodic surface structure. Transmission Electron Microscopy and Electron Energy Loss Spectroscopy indicate a modification of the Si/N ratio over a small region next to the laser machined features. These results demonstrate that low stress ultrafast laser machining can be used to create patterns in SiN membranes quickly and economically, enabling the rapid development of new membrane designs.