Preprint
Phosphorus oxide gate dielectric for black phosphorus field effect transistors
Abstract
The environmental stability of the layered semiconductor black phosphorus
(bP) remains a challenge. Passivation of the bP surface with phosphorus oxide,
Authors
Dickerson W; Tayari V; Fakih I; Korinek A; Caporali M; Serrano-Ruiz M; Peruzzini M; Heun S; Botton GA; Szkopek T
Publication date
April 10, 2018
DOI
10.48550/arxiv.1804.03639
Preprint server
arXiv