Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry

Atomic layer deposition (ALD) is a thin film deposition technique which operates via repeated alternating and self-terminating surface-based reactions between a precursor and a co-reactant, separated in time by purge steps. This technique is particularly well-suited to the deposition of highly uniform and conformal thin films, even on surfaces with nano-scale high aspect ratio features. Furthermore, use of a metal precursor and a co-reactant in …