Journal article
Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices
Abstract
Research into Zinc Blende III–V compound semiconductors has focused almost entirely on growth on (001)-oriented substrates for more than five decades. This is because high-quality epitaxial layers can be achieved relatively smoothly when III–Vs are grown on (001) substrates. However, emerging technologies generated renewed interest in the growth of high-quality III–Vs on (111)-oriented substrates. Prime examples of these applications are …
Authors
Sadeghi I; Pofelski A; Farkhondeh H; Fernández-Delgado N; Tam MC; Leung KT; Botton GA; Wasilewski ZR
Journal
ACS Applied Nano Materials, Vol. 5, No. 11, pp. 17033–17041
Publisher
American Chemical Society (ACS)
Publication Date
November 25, 2022
DOI
10.1021/acsanm.2c03950
ISSN
2574-0970