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Compositional dependence of the (200) electron...
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Compositional dependence of the (200) electron diffraction in dilute III–V semiconductor solid solutions

Abstract

The quality of semiconductor mixed crystals is strongly dependent on the homogeneity of the distribution of the chemical constituencies. Cross-sectional dark-field transmission electron microscopy (DF TEM) provides an opportunity to access the chemical composition of the structures on the nanoscale.

Authors

Rubel O; Nemeth I; Stolz W; Volz K

Book title

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany

Pagination

pp. 223-224

Publisher

Springer Nature

Publication Date

January 1, 2008

DOI

10.1007/978-3-540-85156-1_112
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