Size‐Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon‐Rich Silicon Oxide Matrix Deposited by ECR‐PECVD

Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with ${\text{Er}}^{3+}$ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to ${\text{Er}}^{3+}$ ions is discussed.