Journal article
Polarimetric photoluminescence microscope for strain imaging on semiconductor devices.
Abstract
Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. This paper thus presents a polarimetric PL microscope dedicated to the characterization of semiconductor devices. The anisotropic strain is quantified through the determination of the degree of linear polarization (DOLP) of the PL and the angle of this partial linear polarization. We illustrate the …
Authors
Schaub E; Ahammou B; Landesman J-P
Journal
Applied Optics, Vol. 61, No. 6, pp. 1307–1315
Publisher
Optica Publishing Group
Publication Date
February 20, 2022
DOI
10.1364/ao.449825
ISSN
1559-128X