Journal article
RF CMOS RELIABILITY
Abstract
In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here …
Authors
NASEH S; DEEN MJ
Journal
International Journal of High Speed Electronics and Systems, Vol. 11, No. 04, pp. 1249–1295
Publisher
World Scientific Publishing
Publication Date
12 2001
DOI
10.1142/s0129156401001088
ISSN
0129-1564