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Strain at Coalescence of Patterned (Al)GaN Nanorod...
Journal article

Strain at Coalescence of Patterned (Al)GaN Nanorod Arrays Formed by Selective Area Growth for Optoelectronic Devices

Authors

Pofelski A; Woo S; Le B; Liu X; Zhao S; Mi Z; Botton G

Journal

Microscopy and Microanalysis, Vol. 22, No. S3, pp. 1530–1531

Publisher

Oxford University Press (OUP)

Publication Date

July 2016

DOI

10.1017/s1431927616008497

ISSN

1431-9276