Journal article
Energy -Loss Fine Structures at the Si-Gd2O3, Interface
Abstract
Abstract In recent years, electron energy loss spectroscopy has provided high spatial resolution information on the elemental composition of interfacial reactions. with the use of field emission guns in conventional TEM or STEM, additional information on the chemical, structural and electronic state at grain boundaries and interfaces can also be obtained (e.g. Ref. 1 and 2). in the study of new types of materials for semiconductor applications …
Authors
Botton G; Gupta JA; Landheer D; McCaffrey J; Sproule G; Graham M
Journal
Microscopy and Microanalysis, Vol. 7, No. S2, pp. 302–303
Publisher
Oxford University Press (OUP)
Publication Date
August 1, 2001
DOI
10.1017/s1431927600027586
ISSN
1431-9276