Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate Journal Articles uri icon

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  • Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 °C. The device exhibited an on/off ratio of 1.5×106 and a high field-effect mobility of 10.2 cm2 V-1 s-1, which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate.


  • Hyung, Gun Woo
  • Park, Jaehoon
  • Wang, Jian-Xun
  • Lee, Ho Won
  • Li, Zhao-Hui
  • Koo, Ja-Ryong
  • Kwon, Sang Jik
  • Cho, Eou-Sik
  • Kim, Woo Young
  • Kim, Young Kwan

publication date

  • July 1, 2013