Rare-Earth doped silicon based luminescent materials have become an attractive solution in some key areas of technological development. For instance, in the field of silicon photonics there is a drive to replace electronic on-chip components with photonic counterparts [1-2]. One of the major challenges thus far has been to provide the monolithic integration of an efficient reliable electrically driven light source. Such an element could also be used for solid state lighting, and avoid expensive III-V compounds that cannot be fully integrated into electronic drivers in a CMOS line .
In-situ doping of Eu3+ions in silicon oxides and oxynitrides fabricated by electron-cyclotron-resonance plasma enhanced chemical vapour deposition (ECR-PECVD) is performed. Doping is achieved by using a Circular High Vacuum Magnetron sputtering source attached to the ECR-PECVD tool. The doping concentration is varied by varying the distance of the sputtering source to the target. The hot matrix composition is varied through varying oxygen and nitrogen gas flows. The effects on the doping concentrations of the sputtering source distance to target is determined through Rutherford Backscattering Spectrometry and Variable Angle Spectroscopic Ellipsometry. Preliminary luminescence measurements are discussed.
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