Improved surface plasmon enhanced photodetection at an AuGaAs schottky junction using a novel molecular beam epitaxy grown Otto coupling structure

Measurements of reflectivity and photocurrent as a function of angle of incidence and wavelength have been made for a GaAsAlAsGaAsAu Schottky structure based on an Otto coupling geometry which allows incident p-polarized radiation to couple to the surface plasmon (SP) mode at the AuGaAs interface. At resonance, E fields associated with the SP excitation are concentrated at the GaAsAu Schottky interface itself, enabling strong enhancement …