Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors

Freestanding semiconductor nanowires have opened up possibilities for semiconductor devices, enabling geometries, material combinations, and strain states, which were not previously possible. Along these lines, spontaneous bending in asymmetric core–shell nanowire heterostructures has recently been proposed as a means to realize previously unimagined device geometries, strain-gradient engineering, and bottom-up device fabrication. The synthesis …