Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor–solid method. Well-ordered InAs NWs were grown on GaAs(111)B and Si(111) substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). Vertical and high aspect ratio InAs NWs with a hexagonal shape were grown on both GaAs and Si substrates. The impact of the growth conditions on the InAs morphology was investigated. The final shape …