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Coupling of bias-induced crystallographic shear...
Journal article

Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

Abstract

Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in heterointerfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr0.2Ti0.8O3 are strongly coupled to polar interfaces through the formation of 12〈101〉{h0l}- type …

Authors

Han M-G; Garlow JA; Bugnet M; Divilov S; Marshall MSJ; Wu L; Dawber M; Fernandez-Serra M; Botton GA; Cheong S-W

Journal

Physical Review B, Vol. 94, No. 10,

Publisher

American Physical Society (APS)

Publication Date

September 1, 2016

DOI

10.1103/physrevb.94.100101

ISSN

2469-9950