Damage behavior and atomic migration in MgAl 2 O 4 under an 80 keV scanning focused probe in a STEM
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With the dramatic improvement in the spatial resolution of scanning transmission electron microscopes over the past few decades, the tolerance of a specimen to the high-energy electron beam becomes the limiting factor for the quality of images and spectra obtained. Therefore, a deep understanding of the beam irradiation processes is crucial to extend the applications of electron microscopy. In this paper, we report the structural evolution of a selected oxide, MgAl2O4, under an 80 keV focused electron probe so that the beam irradiation process is not dominated by the knock-on mechanism. The formation of peroxyl bonds and the assisted atomic migration were studied using imaging and electron energy-loss spectroscopic techniques.
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