Redistribution and activation of ion implanted As in Si during RTA for concentrations around solid solubility

The redistribution and electrical activity of ion implanted As in Si after RTA at temperatures of 800 to 1100°C for 25 s have been studied by combination of RBS/channeling, Hall-effect/resistivity measurements, and TEM. Complete electrical activity is observed after RTA at temperatures above - 1050°C for the investigated as-implanted peak concentration range (1 x 10201 × 1021 cm−3). Very good agreement is found between experimental and calculated profiles assuming only concentration dependent diffusivity including a second-order term in carrier concentration, provided all the arsenic is electrically active during diffusion.