Inside Back Cover (Phys. Status Solidi B 2/2010)

The illustration on the inside back cover refers to the Editor's Choice article on page 248ff. Tyler Roschuk and his collaborators found luminescence from Tb‐doped silicon oxide samples to be strongly correlated to O‐related energy states using X‐ray absorption spectroscopy. The central part of the picture shows the X‐ray excited optical luminescence (XEOL) profile scanned over the O K‐edge. The upper plot depicts the total electron and photoluminescence (integrated XEOL) yields at this edge. The onset of strong Tb3+ luminescence, clearly distinguished at 542 eV in the lower XEOL spectrum, is observed after excitation at and above the O K‐edge. Similar results have been obtained at the Si K‐edge at energies related to Si‐O bonding.