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Pattern Formation during CW Laser Melting of...
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Pattern Formation during CW Laser Melting of Silicon

Abstract

We summarize our recent experimental and theoretical work on the molten-solid morphologies which form during irradiation of thin Si films by a cw, ⋋ = 10.6µm laser. We have observed a variety of ordered and disordered patterns which depend on laser intensity, spot size, polarization and angle of incidence.

Authors

Dworschak K; Preston JS; Sipe JE; Van Driel HM

Book title

Patterns, Defects and Materials Instabilities

Pagination

pp. 331-346

Publisher

Springer Nature

Publication Date

January 1, 1990

DOI

10.1007/978-94-009-0593-1_22
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