Journal article
Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
Authors
Subramanian SV; Arora BM; Mahopatra YN; Kumar V
Journal
Materials Science Forum, Vol. 10-12, , pp. 405–410
Publisher
Trans Tech Publications
Publication Date
January 1, 1986
DOI
10.4028/www.scientific.net/msf.10-12.405
ISSN
0255-5476