Journal article
Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem
Abstract
Implantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident energy from 1.0 to 2.8 MeV either along <0001> or <1120> axial channeling directions. The amount of disorder measured were two orders of magnitude lower than the calculated Cd disorder. Damage when analysed …
Authors
Parikh NR; Thompson DA; Burkova R; Raghunathan VS
Journal
MRS Advances, Vol. 27, No. 1, pp. 323–328
Publisher
Springer Nature
Publication Date
1983
DOI
10.1557/proc-27-323
ISSN
2731-5894