P‐48: High Performance Dielectric Layer for Thin Film Oxide Phosphor Electroluminescent Devices

Abstract A high performance dielectric layer having a capacitance 100 nF/cm 2 has been developed for thin film electroluminescent (EL) devices. Based on SrTiO 3 , this layer is ∼2m thick with 200, and can support 250 volts. When incorporated into an EL device, self‐healing behaviour is observed, and steep B‐V behaviour is obtained. Completed green and red emitting oxide phosphor EL devices on Corning 1737 glass substrates are described.