P‐48: High Performance Dielectric Layer for Thin Film Oxide Phosphor Electroluminescent Devices Journal Articles uri icon

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abstract

  • AbstractA high performance dielectric layer having a capacitance 100 nF/cm2 has been developed for thin film electroluminescent (EL) devices. Based on SrTiO3, this layer is ∼2m thick with 200, and can support 250 volts. When incorporated into an EL device, self‐healing behaviour is observed, and steep B‐V behaviour is obtained. Completed green and red emitting oxide phosphor EL devices on Corning 1737 glass substrates are described.

publication date

  • May 2002