Improving the yield of GaAs nanowires on silicon by Ga pre-deposition Journal Articles

abstract

• Abstract GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor−liquid−solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.

authors

• Wilson, DP
• Dubrovskii, VG
• Lapierre, Ray Robert

status

• published 

publication date

• June 25, 2021

has subject area

• Nanoscience & Nanotechnology (Science Metrix)

published in

• Nanotechnology  Journal

keywords

• GaAs
• molecular beam epitaxy
• nanowire

Digital Object Identifier (DOI)

• 10.1088/1361-6528/abef93

PubMed ID

• 33730697

start page

• 265301

end page

• 265301

volume

• 32

issue

• 26