Long catalyst-free InAs nanowires grown on silicon by HVPE Academic Article uri icon

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abstract

  • We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.

authors

  • Grégoire, Gabin
  • Gil, Evelyne
  • Zeghouane, Mohammed
  • Bougerol, Catherine
  • Hijazi, Hadi
  • Castelluci, Dominique
  • Dubrovskii, Vladimir G
  • Trassoudaine, Agnès
  • Goktas, Nebile Isik
  • Lapierre, Ray Robert
  • André, Yamina

publication date

  • January 14, 2021